Excess Hot-Carrier Currents in SO1 MOSFETs and Its Implications
نویسندگان
چکیده
This work demonstrates that excess hot-carrier currents in SO1 MOSFETs are caused by self-heating. Self-heating-free Ism data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2V.
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